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Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy

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Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy

Auteurs : RBID : Pascal:02-0124160

Descripteurs français

Pascal (Inist)
- 8115L, 8105E, 6475, 6837U, 6855A, 6855J, 6855N, 7855C, 7866F, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Couche épitaxique semiconductrice, Epitaxie phase liquide, Croissance semiconducteur, Solubilité état solide, Analyse sonde électronique, Microscopie optique champ proche, Photoluminescence.

English descriptors

KwdEn :
- Electron probe analysis, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, LPE, Near-field scanning optical microscopy, Photoluminescence, Semiconductor epitaxial layers, Semiconductor growth, Solid solubility.

Abstract

Near-field scanning optical microscopy (NSOM) and electron probe microanalysis (EPMA) were used to study the topographic and microscopic optical properties of indium-gallium-phosphide (In_1-xGa_xP) samples grown by liquid phase epitaxy on gallium-arsenide substrates. NSOM imaging found strong and highly localized variations in the photoluminescence (PL) intensity for samples that were highly lattice mismatched with the substrate. The topography and optical features were roughly spatially correlated for these samples. Shifts in the PL peak energy position (by as much as 27 meV) were found during scans across highly mismatched samples, whereas no shifts were seen for In_1-xGa_xP films with a nearly lattice matched composition. Compositional fluctuations were determined to be the cause of these PL peak energy shifts. EPMA provided corroborating evidence that compositional fluctuations are spatially correlated with the topography. These composition fluctuations arise from the known solid-solid miscibility gap in the In_1-xGa_xP system at temperatures used for the growth of these samples. © 2002 American Institute of Physics.

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<author><name sortKey="Kuech, T F" uniqKey="Kuech T">T. F. Kuech</name>
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<front><div type="abstract" xml:lang="en">Near-field scanning optical microscopy (NSOM) and electron probe microanalysis (EPMA) were used to study the topographic and microscopic optical properties of indium-gallium-phosphide (In<sub>1-x</sub>
Ga<sub>x</sub>
P) samples grown by liquid phase epitaxy on gallium-arsenide substrates. NSOM imaging found strong and highly localized variations in the photoluminescence (PL) intensity for samples that were highly lattice mismatched with the substrate. The topography and optical features were roughly spatially correlated for these samples. Shifts in the PL peak energy position (by as much as 27 meV) were found during scans across highly mismatched samples, whereas no shifts were seen for In<sub>1-x</sub>
Ga<sub>x</sub>
P films with a nearly lattice matched composition. Compositional fluctuations were determined to be the cause of these PL peak energy shifts. EPMA provided corroborating evidence that compositional fluctuations are spatially correlated with the topography. These composition fluctuations arise from the known solid-solid miscibility gap in the In<sub>1-x</sub>
Ga<sub>x</sub>
P system at temperatures used for the growth of these samples. © 2002 American Institute of Physics.</div>
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Ga<sub>x</sub>
P films with a nearly lattice matched composition. Compositional fluctuations were determined to be the cause of these PL peak energy shifts. EPMA provided corroborating evidence that compositional fluctuations are spatially correlated with the topography. These composition fluctuations arise from the known solid-solid miscibility gap in the In<sub>1-x</sub>
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Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy

Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy

Descripteurs français

English descriptors

Abstract

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